Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate

Author:

Md Sahar Mohd Ann Amirul Zulffiqal,Hassan Zainuriah,Ng Sha Shiong,Hamzah Nur Atiqah

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. 400-nm InGaN – GaN and InGaN – AlGaN Multiquantum Well Light-Emitting Diodes;Chang,2002

2. High-power and high-efficiency InGaN-based light emitters;Laubsch;IEEE Trans. Electron. Dev.,2010

3. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier;Jia;Superlattice. Microst.,2016

4. Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates;Horng;J. Cryst. Growth,2007

5. Application of ultraviolet light-emitting diodes (UV-LED) to full-scale drinking-water disinfection;Jarvis;Water (Switzerland),2019

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