Energy band structure tailoring of vertically aligned InAs/GaAsSb quantum dot structure for intermediate-band solar cell application by thermal annealing process-Reference-Cited by-同舟云学术

Energy band structure tailoring of vertically aligned InAs/GaAsSb quantum dot structure for intermediate-band solar cell application by thermal annealing process

Published:2014-12-05 Issue:25 Volume:22 Page:30963
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Liu Wei-Sheng,Chu Ting-Fu,Huang Tien-Hao

Funder

National Science Council Taiwan (NSC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference44 articles.

1. Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

2. Enhancing device characteristics of 1.3μm emitting InAs/GaAs quantum dot lasers through dot-height uniformity study

3. Ground state lasing at 1.34μm from InAs∕GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition

4. Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

5. An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

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