Ground state lasing at 1.34μm from InAs∕GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2748082
Reference11 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. 1.3 μm room-temperature GaAs-based quantum-dot laser
3. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
4. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m
5. 1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine
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