Enhancing device characteristics of 1.3μm emitting InAs/GaAs quantum dot lasers through dot-height uniformity study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference41 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer
3. InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy
4. Optical properties of InAs quantum dots with InAlAs∕InGaAs composite matrix
5. Pinholelike defects in multistack 1.3μm InAs quantum dot laser
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1. High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers;Chinese Physics B;2023-09-01
2. Effect of structural properties of InAs/GaAs QDs on optoelectronic devices;Materials Today: Proceedings;2021
3. Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers*;Chinese Physics B;2019-07-01
4. Energy band structure tailoring of vertically aligned InAs/GaAsSb quantum dot structure for intermediate-band solar cell application by thermal annealing process;Optics Express;2014-12-05
5. Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 131 μm;Optics Express;2014-07-28
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