Optical properties of InAs quantum dots with InAlAs∕InGaAs composite matrix
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1829147
Reference14 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Large ground-to-first-excited-state transition energy separation for InAs quantum dots emitting at 1.3 μm
3. Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
4. Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
5. Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures
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1. Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics;Semiconductor Science and Technology;2019-08-27
2. Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers;Nanoscale Research Letters;2019-02-01
3. Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots;Nanoscale Research Letters;2016-06-02
4. Broadband Chirped InAs Quantum-Dot Superluminescent Light-Emitting Diodes With InxAl1-xAs Strain-Reducing Layers;IEEE Photonics Journal;2016-06
5. Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure;Nanoscale Research Letters;2016-03-01
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