Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126097
Reference12 articles.
1. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$
2. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
3. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
4. Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
5. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
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