Large ground-to-first-excited-state transition energy separation for InAs quantum dots emitting at 1.3 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1503156
Reference17 articles.
1. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
2. Low-threshold oxide-confined 1.3-μm quantum-dot laser
3. High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 [micro sign]m
4. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
5. GaAs-based long-wavelength lasers
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