Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics

Published:2019-08-27 Issue:9 Volume:34 Page:095017
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chatterjee Arka,Panda Debiprasad,Patwari Jayita,Tongbram Binita,Chakrabarti Subhananda^ORCID,Pal Samir Kumar^ORCID

Funder

Science and Engineering Research Board

Indian Space Research Organisation

Department of Science and Technology, Ministry of Science and Technology

Board of Research in Nuclear Sciences

Department of Biotechnology , Ministry of Science and Technology

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab3487/pdf

Reference70 articles.

1. Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge

2. A Photovoltaic InAs Quantum-Dot Infrared Photodetector

3. Comparison of the photoluminescence spectra between quantum well structure and quantum dots structure

4. Energy levels in three-dimensional quantum-confinement structures

5. Quantum dots: promises and accomplishments

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots;Nanomaterials;2024-02-17

2. Formation of strain reduced In0.54Al0.34Ga0.12As layer of vertically coupled QDs arrays for O-band telecom single photon sources;Journal of Alloys and Compounds;2023-10

3. Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots;Applied Surface Science;2023-01

4. High-speed InAs quantum dot photodetectors for data/telecom;Photodetectors;2023

5. Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers;Microelectronic Engineering;2022-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3