Formation of strain reduced In0.54Al0.34Ga0.12As layer of vertically coupled QDs arrays for O-band telecom single photon sources

Author:

Tongbram Binita,Deviprasad Vidya P.,Kumbhar Amit Vitthal,Sengupta Saumya,Chakrabarti SubhanandaORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference48 articles.

1. Quantum-dot single-photon sources for the quantum internet;Lu;Nat. Nanotechnol.,2021

2. Monolithic integration of O-band InAs quantum dot lasers with engineered GaAs virtual substrate based on silicon;Xu;Nanomaterials,2022

3. Quantum teleportation using highly coherent emission from telecom C-band quantum dots;Anderson;Npj Quantum Inf.,2020

4. High-performance single-photon sources at telecom wavelength based on broadband hybrid circular bragg gratings;Barbiero;ACS Photonics,2022

5. Single-photon emission at 1.55 μ m from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers;Paul;Appl. Phys. Lett.,2017

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