Single-photon emission at 1.55 μm from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers-Reference-Cited by-同舟云学术

Single-photon emission at 1.55 μm from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers

Published:2017-07-17 Issue:3 Volume:111 Page:033102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Paul Matthias¹,Olbrich Fabian¹,Höschele Jonatan¹,Schreier Susanne¹,Kettler Jan¹,Portalupi Simone Luca¹,Jetter Michael¹^ORCID,Michler Peter¹

Affiliation:

1. Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Funder

Center for Integrated Quantum Science and Technology

Bundesministerium für Bildung und Forschung (BMBF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993935

Reference31 articles.

1. A Quantum Dot Single-Photon Turnstile Device

2. Improved fidelity of triggered entangled photons from single quantum dots

3. Entangled Photon Pairs from Semiconductor Quantum Dots

4. Triggered polarization-entangled photon pairs from a single quantum dot up to 30 K

5. Time-bin entangled photons from a quantum dot

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