Local droplet etching of a vicinal InGaAs(111)A metamorphic layer-Reference-Cited by-同舟云学术

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Local droplet etching of a vicinal InGaAs(111)A metamorphic layer

Published:2024-10 Issue: Volume:669 Page:160450
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tuktamyshev Artur^ORCID,Lambardi Davide^ORCID,Vichi Stefano,Cesura Federico^ORCID,Cecchi Stefano,Fedorov Alexey,Bietti Sergio,Sanguinetti Stefano^ORCID

Publisher

Elsevier BV

Reference59 articles.

1. Quantum cryptography;Gisin;Rev. Mod. Phys.,2002

2. The quantum internet;Kimble;Nature,2008

3. Semiconductor devices for entangled photon pair generation: a review;Orieux;Rep. Progr. Phys.,2017

4. Semiconductor quantum dots as an ideal source of polarization-entangled photon pairs on-demand: a review;Huber;J. Opt.,2018

5. InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: a review;Portalupi;Semicond. Sci. Technol.,2019

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