Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots-Reference-Cited by-同舟云学术

Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots

Published:2023-01 Issue: Volume:607 Page:154948
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Panda Debiprasad,Ranjan Mantri Manas,Kumar Ravindra,Das Debabrata,Saha Rajib,Chakrabarti Subhananda

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference42 articles.

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4. Strong interband transitions in InAs quantum dots solar cell;Wu;Appl. Phys. Lett.,2012

5. Effect of position-dependent doping on intermediate band generation- recombination rate in InAs/GaAs quantum dot solar cell;Sharan;IEEE Trans. on,2022

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