Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 131 μm
Author:
Funder
National Science Council Taiwan (NSC)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference40 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. 1.3 μm room-temperature GaAs-based quantum-dot laser
3. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
4. Direct modulation of excited state quantum dot lasers
5. Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser
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4. Influence of the excitation density and temperature on the optical properties of type I InAs/GaAsSb quantum dots;Journal of Luminescence;2020-09
5. Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well;Optical and Quantum Electronics;2020-06
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