Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3535607
Reference22 articles.
1. High-speed quantum dot lasers
2. Small-signal modulation characteristics of p-doped 1.1- and 1.3-/spl mu/m quantum-dot lasers
3. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers
4. High-Frequency Modulation Characteristics of 1.3->tex<$muhboxm$>/tex<InGaAs Quantum Dot Lasers
5. High-speed 1.3μm tunnel injection quantum-dot lasers
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3. Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers;Physical Review B;2018-10-22
4. Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot–quantum well structures emitting at telecom spectral range;Applied Physics Letters;2018-01-29
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