Pinholelike defects in multistack 1.3μm InAs quantum dot laser
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2202195
Reference18 articles.
1. Effect of homogeneous broadening of optical gain on lasing spectra in self-assembledInxGa1−xAs/GaAsquantum dot lasers
2. InAs∕InGaAs∕GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency
3. In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
4. Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
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3. Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties;Japanese Journal of Applied Physics;2022-07-28
4. Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures;Journal of Alloys and Compounds;2020-08
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