Tailoring Energy Band Alignment of Vertically Aligned InGaAs Quantum Dots Capped with GaAs(Sb)/AlGaAsSb Composite Structure after Thermal Annealing Treatment-Reference-Cited by-同舟云学术

Tailoring Energy Band Alignment of Vertically Aligned InGaAs Quantum Dots Capped with GaAs(Sb)/AlGaAsSb Composite Structure after Thermal Annealing Treatment

Published:2017-02-03 Issue:2 Volume:4 Page:242-250
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Liu Wei-Sheng¹^ORCID,Liu Ren-Yo¹,Lin Hsiao-Chien¹

Affiliation:

1. Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.6b00480

Reference56 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Effect of Sb induced type II alignment on dynamical processes in InAs/GaAs/GaAsSb quantum dots: Implication to solar cell design

3. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

4. High-gain quantum-dot semiconductor optical amplifier for 1300 nm

5. Pinholelike defects in multistack 1.3μm InAs quantum dot laser

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