Role of arsenic vapor pressure in transformation of InAs quantum dots during overgrowth by a GaAs capping layer-Reference-Cited by-同舟云学术

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Role of arsenic vapor pressure in transformation of InAs quantum dots during overgrowth by a GaAs capping layer

Published:2024-08 Issue: Volume:272 Page:120621
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Balakirev Sergey^ORCID,Nadtochiy Alexey,Kryzhanovskaya Natalia,Kirichenko Danil,Chernenko Natalia,Shandyba Nikita,Komarov Sergey,Dragunova Anna,Zhukov Alexey,Solodovnik Maxim

Funder

HSE University - Saint Petersburg

Southern Federal University

Russian Science Foundation

Publisher

Elsevier BV

Reference38 articles.

1. Quantum dot lasers: breakthrough in optoelectronics;Bimberg;Thin Solid Films,2000

2. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates;Nishi;Appl. Phys. Lett.,1999

3. Emission wavelength control of ordered arrays of InGaAs/GaAs quantum dots;Kulkova;J. Cryst. Growth,2017

4. Design and optimization of unidirectional emitting multi-wavelength InAs/GaAs quantum dot microring lasers on silicon;Zhu;Appl. Phys. A.,2021

5. High‐power, narrow‐linewidth, and low‐noise quantum dot distributed feedback lasers;Wang;Laser Photon. Rev.,2023

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