Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2405872
Reference22 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
3. High-speed 1.3μm tunnel injection quantum-dot lasers
4. High temperature performance of self-organised quantum dot laser with stacked p-doped active region
5. 1.3 μm room-temperature GaAs-based quantum-dot laser
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