An Analytical Approach to Study Annealing Induced Interdiffusion of In and Ga for Truncated Pyramidal InAs/GaAs Quantum Dots
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/8933521/09018393.pdf?arnumber=9018393
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2. Tailoring of the nonlinear optical rectification in vertically and laterally coupled InxGa1-xAs/GaAs quantum dots for Tera-hertz applications: Under In/Ga inter-diffusion, indium segregation, and strains effects;Results in Physics;2023-05
3. A Study on the Consequence of Compressive and Tensile Strain on the Electronic Properties of InPNBi using Multi-band k dot p Hamiltonian;Materials Today: Proceedings;2022
4. Phonon-induced decoherence of a spin based qubit made with asymmetric coupled quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2021-06
5. In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing;ACS Applied Electronic Materials;2020-04-08
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