In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In

In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing

Published:2020-04-08 Issue:5 Volume:2 Page:1243-1253
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Dongre Suryansh¹,Paul Sritoma²,Mondal Shubham²,Kumar Ravindra¹,Panda Debiprasad¹,Gazi Sanowar Alam¹,Das Debabrata¹,Kumar Ravinder³,Shriram Saranya Reddy¹,Mantri Manas Ranjan¹,Tongbram Binita³,Chakrabarti Subhananda¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India

2. Department of Electronics and Communication Engineering, Kalyani Government Engineering College, Nadia-741235, India

3. Centre for Research in Nanotechnology & Science, Indian Institute of Technology Bombay, Mumbai-400076, India

Funder

Indian Space Research Organisation

Science and Engineering Research Board

Department of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00054

Reference46 articles.

1. High performance red-emitting multiple layer InGaN/GaN quantum dot lasers

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3. Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

4. All-Microwave Control and Dispersive Readout of Gate-Defined Quantum Dot Qubits in Circuit Quantum Electrodynamics

5. Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

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