Absorption Coefficient, Mobility and Carrier Lifetime Calculations of P-I-P Quantum Dot Infrared Photodetectors
Author:
Affiliation:
1. Physical Research Laboratory,Ahmedabad,India,380059
2. Space Application Center, Indian Space Research Organization (ISRO),Ahmedabad,India,380015
3. Indian Institute of Technology Bombay,Mumbai,India,400076
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511270/10511310/10512282.pdf?arnumber=10512282
Reference12 articles.
1. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
2. Transient photoconductivity measurements of carrier lifetimes in an InAs∕In0.15Ga0.85As dots-in-a-well detector
3. Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors
4. High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model
5. In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing
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