High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model-Reference-Cited by-同舟云学术

High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model

Published:2019-10 Issue: Volume:804 Page:18-26
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Deviprasad Vidya P.,Ghadi Hemant,Das Debabrata,Panda Debiprasad,Rawool Harshal,Chavan Vinayak,Tongbram Binita,Patwari Jayita,Pal Samir Kumar,Chakrabarti Subhananda^ORCID

Funder

DST Nanomission, India

Science and Engineering Research Board-Department of Science and Technology, India

Indian Space Research Organisation

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference45 articles.

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3. Far-infrared photoconductivity in self-organized InAs quantum dots;Phillips;Appl. Phys. Lett.,1998

4. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors;Maimon;Appl. Phys. Lett.,1998

5. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors;Pan;Appl. Phys. Lett.,1998

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