Controlling optical polarization of {11–22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers-Reference-Cited by-同舟云学术

Controlling optical polarization of {11–22} semipolar multiple quantum wells using relaxed underlying InGaN buffer layers

Published:2016-08 Issue: Volume:58 Page:243-247
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Okada Narihito,Okamura Yasuhiro,Uchida Katsumi,Tadatomo Kazuyuki

Funder

Grant-in-Aid for Scientific Research B

Grant-in-Aid for Young Scientists

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference17 articles.

1. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

2. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

3. Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

4. Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations

5. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

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1. Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer;Japanese Journal of Applied Physics;2022-11-14

2. Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells;Crystals;2022-09-27

3. Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review;Materials Science in Semiconductor Processing;2022-06

4. Optical polarization properties of (11–22) semi-polar InGaN LEDs with a wide spectral range;Scientific Reports;2020-04-28

5. Temperature dependence of the Raman-active modes in the semipolar (11 2¯2) plane GaN Film;Journal of Applied Physics;2016-12-28