Band gap energy of GaSbxN1-x across the whole composition range-Reference-Cited by-同舟云学术

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Band gap energy of GaSbxN1-x across the whole composition range

Published:2020-02 Issue: Volume:137 Page:109216
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Zhao Chuan-Zhen,Guo Yu,Sun Xiao-Dong,Wang Sha-Sha,Wang Jun

Funder

National Nature Science Foundation of China

China Scholarship Council

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference22 articles.

1. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3

2. A model for the bandgap energy of the N-rich GaNAs(0 ≤ x ≤ 0.07)

3. Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaNxBiyAs1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05)

4. Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

5. Growth and characterization of highly mismatched GaN1−xSbx alloys

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CVD grown GaSbxN1−x films as visible-light active photoanodes;Dalton Transactions;2021

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