Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaNxBiyAs1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05)-Reference-Cited by-同舟云学术

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Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaNxBiyAs1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05)

Published:2018-04-26 Issue:8 Volume:47 Page:4539-4543
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Zhao Chuan-Zhen,Ren He-Yu,Wei Tong,Wang Sha-Sha,Lu Ke-Qing

Funder

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11664-018-6317-3/fulltext.html

Reference30 articles.

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2. M.M. Habchi, A.B. Nasr, A. Rebey, and B.E. Jani, Infrared Phys. Technol. 61, 88 (2013).

3. M. Yoshimoto, W. Huang, G. Feng, Y. Tanaka, K. Oe, and J. Crys, Growth 301–302, 975 (2007).

4. W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, and K. Oe, Jpn. J. Appl. Phys. 43, L1350 (2004).

5. M. Yoshimoto, W. Huang, G. Feng, and K. Oe, Phys. Stat. Sol. (b) 243, 1421 (2006).

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