Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. K. Oe and H. Asai, in: Symposium Record Elecronic Matter Symposium’95, Izunagaoka, 1995, p. 191.
2. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
3. Characteristics of Semiconductor Alloy GaAs1-xBix
4. Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
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