New semiconductor alloy GaNAsBi with temperature-insensitive bandgap
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
2. Characteristics of Semiconductor Alloy GaAs1-xBix
3. Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
4. Molecular beam epitaxy growth of GaAs1−xBix
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4. Corrigendum: “Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs–bismide alloy” [Jpn. J. Appl. Phys. 46, L764 (2007)];Japanese Journal of Applied Physics;2023-07-01
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