GaNyAs1-x-yBixAlloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission-Reference-Cited by-同舟云学术

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GaNyAs1-x-yBixAlloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission

Published:2004-09-24 Issue:No. 10B Volume:43 Page:L1350-L1352
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Wei,Yoshimoto Masahiro,Takehara Yuji,Saraie Junji,Oe Kunishige

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=10B/a=L1350/pdf

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces;Applied Physics Letters;2023-11-06

2. Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures;Bismuth-Containing Alloys and Nanostructures;2019

3. Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Alloys and Heterostructures;Physical Review Applied;2018-10-09

4. Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaNxBiyAs1−y−z Alloy (0 ≤ x ≤ 0.05, 0 ≤ y ≤ 0.05);Journal of Electronic Materials;2018-04-26

5. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys;Molecular Beam Epitaxy;2018

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