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Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Alloys and Heterostructures

  • Published:2018-10-09 Issue:4 Volume:10 Page:
  • ISSN:2331-7019
  • Container-title:Physical Review Applied
  • language:en
  • Short-container-title:Phys. Rev. Applied

Author:

Usman Muhammad,Broderick Christopher A.,O’Reilly Eoin P.

Funder

European Commission

Science Foundation Ireland

Engineering and Physical Sciences Research Council

National Science Foundation

Network for Computational Nanotechnology

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces;Applied Physics Letters;2023-11-06

2. Impact of Band Anticrossing on Band-to-Band Tunneling in Highly Mismatched Semiconductor Alloys;Physical Review Applied;2022-01-24

3. Electronic and optical properties of SixGe1−x−ySny alloys lattice-matched to Ge;Physical Review Materials;2022-01-18

4. Type-II GaAs1-xBix/GaNyAs1-y "W" quantum wells for strain-compensated GaAs-based telecom lasers;2021 27th International Semiconductor Laser Conference (ISLC);2021-10-10

5. Bismuth-containing GaAs Core–Shell Nanowires;2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2021-09-13
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