Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Alloys and Heterostructures-Reference-Cited by-同舟云学术

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Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Alloys and Heterostructures

Published:2018-10-09 Issue:4 Volume:10 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Usman Muhammad,Broderick Christopher A.,O’Reilly Eoin P.

Funder

European Commission

Science Foundation Ireland

Engineering and Physical Sciences Research Council

National Science Foundation

Network for Computational Nanotechnology

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.10.044024/fulltext

Reference83 articles.

1. 1.3-μm Range Metamorphic InGaAs Laser With High Characteristic Temperature for Low Power Consumption Operation

2. 1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

3. Theory and Optimization of 1.3- $\mu \text{m}$ Metamorphic Quantum Well Lasers

4. Novel type-II material system for laser applications in the near-infrared regime

5. Gain spectroscopy of a type-II VECSEL chip

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1. Empirical tight-binding method for large-supercell simulations of disordered semiconductor alloys;Physica Scripta;2024-05-31

2. Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces;Applied Physics Letters;2023-11-06

3. Impact of Band Anticrossing on Band-to-Band Tunneling in Highly Mismatched Semiconductor Alloys;Physical Review Applied;2022-01-24

4. Electronic and optical properties of SixGe1−x−ySny alloys lattice-matched to Ge;Physical Review Materials;2022-01-18

5. Type-II GaAs1-xBix/GaNyAs1-y "W" quantum wells for strain-compensated GaAs-based telecom lasers;2021 27th International Semiconductor Laser Conference (ISLC);2021-10-10

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