Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range-Reference-Cited by-同舟云学术

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Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

Published:2009-11-15 Issue:10 Volume:106 Page:103709
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yu K. M.,Novikov S. V.,Broesler R.,Demchenko I. N.,Denlinger J. D.,Liliental-Weber Z.,Luckert F.,Martin R. W.,Walukiewicz W.,Foxon C. T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3259434

Reference39 articles.

1. Band Anticrossing in GaInNAs Alloys

2. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements

3. Physics and Applications of Dilute Nitrides

4. Dilute III-V Nitride Semiconductors and Material Systems

5. GaInNAs: a novel material for long-wavelength semiconductor lasers

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