Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a ‐Plane Walls-Reference-Cited by-同舟云学术

Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a ‐Plane Walls

Published:2020-12-23 Issue:5 Volume:9 Page:2001348
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Ciechanowicz Paulina¹²^ORCID,Gorantla Sandeep¹^ORCID,Michałowski Paweł P.³^ORCID,Zdanowicz Ewelina¹⁴^ORCID,Rousset Jean‐Guy¹^ORCID,Hlushchenko Daria¹^ORCID,Adamczyk Krzysztof¹^ORCID,Majchrzak Dominika¹⁵^ORCID,Kudrawiec Robert¹⁴^ORCID,Hommel Detlef¹²^ORCID

Affiliation:

1. Łukasiewicz Research Network—PORT Polish Center for Technology Development Stabłowicka 147 Wrocław 54‐066 Poland

2. Faculty of Physics and Astronomy University of Wrocław Maxa Borna 9 Wrocław 50‐204 Poland

3. Łukasiewicz Research Network—Institute of Electronic Materials Technology Wólczyńska 133 Warsaw 01‐919 Poland

4. Department of Semiconductor Materials Engineering Wrocław University of Science and Technology Stanisława Wyspiańskiego 27 Wrocław 50‐370 Poland

5. Institute of Low Temperature and Structure Research Polish Academy of Sciences Okólna 2 Wrocław 50‐422 Poland

Funder

Narodowe Centrum Nauki

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202001348

Reference72 articles.

1. Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

2. The nanorod approach: GaN NanoLEDs for solid state lighting

3. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

4. GaN based nanorods for solid state lighting

5. Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

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