Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE-Reference-Cited by-同舟云学术

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Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

Published:2011-01-14 Issue:7 Volume:22 Page:075601
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Tourbot G,Bougerol C,Grenier A,Den Hertog M,Sam-Giao D,Cooper D,Gilet P,Gayral B,Daudin B

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=7/a=075601/pdf

Reference49 articles.

1. Characterization of GaN quantum discs embedded inAlxGa1−xNnanocolumns grown by molecular beam epitaxy

2. Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

3. Photoluminescence properties of a single GaN nanorod with GaN∕AlGaN multilayer quantum disks

4. Exciton and Biexciton Luminescence from Single GaN/AlN Quantum Dots in Nanowires

5. Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

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