Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3238311
Reference11 articles.
1. InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si
2. Radiative lifetime of a single electron-hole pair inGaN∕AlNquantum dots
3. Time-resolved photoluminescence of GaN/Al[sub 0.5]Ga[sub 0.5]N quantum wells
4. Dislocation screening and strongly increased internal quantum efficiency in heteroepitaxialGaN/AlxGa1−xNultraviolet-emitting quantum wells
5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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