Dislocation screening and strongly increased internal quantum efficiency in heteroepitaxialGaN/AlxGa1−xNultraviolet-emitting quantum wells-Reference-Cited by-同舟云学术

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Dislocation screening and strongly increased internal quantum efficiency in heteroepitaxialGaN/AlxGa1−xNultraviolet-emitting quantum wells

Published:2009-02-12 Issue:7 Volume:79 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Fuhrmann D.,Retzlaff T.,Greve M.,Hoffmann L.,Bremers H.,Rossow U.,Hangleiter A.,Hinze P.,Ade G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.073303/fulltext

Reference22 articles.

1. 250nmAlGaN light-emitting diodes

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes

4. High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates

5. High efficiency GaN-based LEDs and lasers on SiC

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1. Mechanism of V-Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation;ACS Omega;2024-01-29

2. Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization;physica status solidi (b);2020-12-21

3. Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells;Japanese Journal of Applied Physics;2018-05-15

4. Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer;Japanese Journal of Applied Physics;2018-04-26

5. Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells;AIP Advances;2015-11

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