Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization-Reference-Cited by-同舟云学术

Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization

Published:2020-12-21 Issue:4 Volume:258 Page:2000464
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Jacopin Gwénolé¹^ORCID,Frankerl Christian²³,Tillner Nadine²⁴,Davies Matthew John²,Rossbach Georg²,Brandl Christian²,Hoffmann Marc Patrick²,Zeisel Roland²,Hoffmann Axel³,Lugauer Hans-Jürgen²

Affiliation:

1. CNRS Grenoble INP Institut Néel Université Grenoble Alpes 38000 Grenoble France

2. OSRAM Opto Semiconductors GmbH Leibnizstr. 4 93055 Regensburg Germany

3. Institut für Festkörperphysik Technische Universität Berlin Hardenbergstr. 36 10623 Berlin Germany

4. Institut für Halbleitertechnik Technische Universität Braunschweig Hans-Sommer-Straße 66 38106 Braunschweig Germany

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000464

Reference28 articles.

1. III-Nitride Ultraviolet Emitters

2. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

3. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

4. Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues

5. 6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation

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