Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues-Reference-Cited by-同舟云学术

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Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues

Published:2019-08-21 Issue:7 Volume:126 Page:075703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Frankerl Christian¹²,Hoffmann Marc P.¹,Nippert Felix²^ORCID,Wang Heng¹,Brandl Christian¹,Tillner Nadine¹³,Lugauer Hans-Jürgen¹^ORCID,Zeisel Roland¹,Hoffmann Axel²,Davies Matthew J.¹

Affiliation:

1. OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

2. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

3. Institut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5100498

Reference33 articles.

1. High power AlGaN ultraviolet light emitters

2. Improving the Efficiency of AlGaN Deep‐UV LEDs by Using Highly Reflective Ni/Al p‐Type Electrodes

3. White light emitting diodes with super-high luminous efficacy

4. High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

5. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes;Applied Physics Letters;2024-07-08

2. Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces;Nanomaterials;2024-06-23

3. Improved internal quantum efficiencies of far-UVC AlGaN/AlN quantum wells by the use of semipolar r-planes;Applied Physics Letters;2023-03-27

4. Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm;ST PETER POLY U J-PH;2023

5. Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions;Japanese Journal of Applied Physics;2022-10-18

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