Characterization of GaN quantum discs embedded inAlxGa1−xNnanocolumns grown by molecular beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.125305/fulltext
Reference13 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Adatom diffusion at GaN (0001) and (0001̄) surfaces
3. Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0001) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks
4. Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2
5. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
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