Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices-Reference-Cited by-同舟云学术

Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices

Published:2018-07-12 Issue:04 Volume:12 Page:1
ISSN:1934-2608
Container-title:Journal of Nanophotonics
language:
Short-container-title:J. Nanophoton.

Author:

Min Jung-Wook¹,Priante Davide¹,Tangi Malleswararao¹,Liu Guangyu¹,Kang Chun Hong¹,Prabaswara Aditya¹,Zhao Chao¹,Al-Maghrabi Latifah¹,Alaskar Yazeed²,Albadri Abdulrahman M.²,Alyamani Ahmed Y.²,Ng Tien Khee¹,Ooi Boon S.¹

Affiliation:

1. King Abdullah University of Science and Technology (KAUST), Photonics Laboratory, Thuwal

2. King Abdulaziz City for Science and Technology (KACST), National Center for Nanotechnology, Riyadh

Publisher

SPIE-Intl Soc Optical Eng

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference211 articles.

1. High-power UV InGaN/AlGaN double-heterostructure LEDs

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

4. Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN

5. physica status solidi (b)

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