Unveiling the Growth Mode Switching Role of As in the Formation of Dodecagonal/Hexagonal GaN Microrods-Reference-Cited by-同舟云学术

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Unveiling the Growth Mode Switching Role of As in the Formation of Dodecagonal/Hexagonal GaN Microrods

Published:2024-09-06 Issue: Volume: Page:
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Janicki Łukasz¹^ORCID,Ciechanowicz Paulina¹,Majchrzak Dominika¹²^ORCID,Gorantla Sandeep¹,Kudrawiec Robert¹³^ORCID,Hommel Detlef¹²

Affiliation:

1. Łukasiewicz Research Network─PORT Polish Center for Technology Development, Stablowicka 147, 54-066 Wrocław, Poland

2. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422 Wrocław, Poland

3. Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Funder

Narodowe Centrum Nauki

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00418

Reference25 articles.

1. Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

2. Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies

3. AlGaN‐based ultraviolet light‐emitting diodes: challenges and opportunities

4. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

5. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

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