Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm-Reference-Cited by-同舟云学术

Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

Published:2016-11-14 Issue:20 Volume:109 Page:201106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao S.¹,Sadaf S. M.¹^ORCID,Vanka S.¹,Wang Y.¹,Rashid R.¹,Mi Z.¹²

Affiliation:

1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada

2. Department of Electrical Engineering and Computer Science, Center for Photonics and Multiscale Nanomaterials, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

Research, Development and Engineering Command (RDECOM)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4967837

Reference42 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Ultraviolet light-emitting diodes based on group three nitrides

3. Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy

4. Advances in group III-nitride-based deep UV light-emitting diode technology

5. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

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