Affiliation:
1. Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada
Abstract
Aluminum gallium nitride (AlGaN) nanowires by molecular beam epitaxy (MBE) have become an emerging platform for semiconductor deep ultraviolet (UV) light-emitting diodes (LEDs). Despite of the progress, much less attention has been paid to the effect of substrate rotation speed on the device performance. Herein, we investigate the effect of the substrate rotation speed on the nanowire height and diameter uniformity, as well as the electrical and optical performance of MBE-grown AlGaN nanowire deep UV LED structures with low and high substrate rotation speeds. It is found that by increasing the substrate rotation speed from 4 revolutions per minute (rpm) to 15 rpm, the statistical variation of the nanowire height and diameter is reduced significantly. Increasing the substrate rotation speed also improves the device electrical performance, with a factor of 4 reduction on the device series resistance. This improved electrical performance further transfers to the improved optical performance. The underlying mechanisms for these improvements are also discussed.
Funder
Fonds de recherche du Québec – Nature et technologies
Natural Sciences and Engineering Research Council of Canada
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials