Role of Temperature in Arsenic-Induced Antisurfactant Growth of GaN Microrods

Author:

Ciechanowicz Paulina12ORCID,Gorantla Sandeep1,Wełna Monika3,Pieniążek Agnieszka3,Serafińczuk Jarosław14ORCID,Kowalski Bogdan5,Kudrawiec Robert13,Hommel Detlef16

Affiliation:

1. Łukasiewicz Research Network─PORT Polish Center for Technology Development, Wrocław 54-066, Poland

2. Faculty of Physics and Astronomy, University of Wrocław, Wrocław 50-137, Poland

3. Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wrocław 50-370, Poland

4. Department of Nanometrology, Wroclaw University of Science and Technology, Janiszewskiego 11/17, Wroclaw 50-372, Poland

5. Institute of Physics, Polish Academy of Sciences, Lotników 32/46, Warsaw 02-668, Poland

6. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wrocław 50-422, Poland

Funder

Narodowe Centrum Nauki

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

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