CVD grown GaSbxN1−x films as visible-light active photoanodes-Reference-Cited by-同舟云学术

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CVD grown GaSbxN1−x films as visible-light active photoanodes

Published:2021 Issue:41 Volume:50 Page:14832-14841
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Zywitzki Dennis¹,Mitoraj Dariusz²,Vilk Yury²^ORCID,Mendoza Reyes Oliver²,Schleuning Markus³^ORCID,Friedrich Dennis³^ORCID,Sadlo Alexander¹,Rogalla Detlef⁴,Eichberger Rainer³,Beranek Radim²^ORCID,Devi Anjana¹^ORCID

Affiliation:

1. Inorganic Materials Chemistry, Ruhr University Bochum, Universitätsstr. 150, 44801 Bochum, Germany

2. Institute of Electrochemistry, Ulm University, Albert-Einstein-Allee 47, 89081 Ulm, Germany

3. Helmholtz-Zentrum Berlin for Materials and Energy, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

4. RUBION, Ruhr University Bochum, Universitätsstr. 150, 44801 Bochum, Germany

Abstract

A MOCVD route for deposition of GaSbxN1−x in the dilute antimony regime was developed and yielded visible light photoactive films.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT02455H

Reference48 articles.

1. Visible-light absorption and large band-gap bowing of GaN1−xSbxfrom first principles

2. Band-Edge Potentials of n-Type and p-Type GaN

3. Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting

4. Reddish GaN:ZnO photoelectrode for improved photoelectrochemical solar water splitting

5. Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

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