Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125615
Reference16 articles.
1. Shortest wavelength semiconductor laser diode
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
4. Optical band gap in Ga1−xInxN (0
5. Preparation and properties of III‐V nitride thin films
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