A model for the bandgap energy of the N-rich GaNAs(0 ≤ x ≤ 0.07)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3701284
Reference21 articles.
1. Atomic‐scale structure and electronic properties of GaN/GaAs superlattices
2. Bowing parameter of the band-gap energy of GaNxAs1−x
3. Electronic properties of arsenic-doped gallium nitride
4. The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
5. Band anticrossing in highly mismatched III V semiconductor alloys
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2. Band gap energy of GaSbxN1-x across the whole composition range;Journal of Physics and Chemistry of Solids;2020-02
3. Fabrication of GaN(1−x) Asx , Zinc-Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System;Crystal Research and Technology;2018-07-10
4. The Composition Dependence of the Band Gap Energy for the O-Rich ZnSexO1−x;Journal of Electronic Materials;2018-04-03
5. Partially polycrystalline GaN1−xAsxalloys grown on GaAs in the middle composition range achieving a smaller band gap;Japanese Journal of Applied Physics;2017-07-11
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