Electronic properties of arsenic-doped gallium nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121247
Reference10 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
3. Photoluminescence of ion‐implanted GaN
4. Photoluminescenece in P-Doped GaN
5. Incomplete Solubility in Nitride Alloys
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3. The origin for the formation of Al–N clusters in the Ga-rich dilute nitride Al x Ga 1 − x N y X 1 − y (X = As, or P) alloys;Superlattices and Microstructures;2014-11
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