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Potential for neutron and proton transmutation doping of GaN and Ga2O3

  • Published:2020 Issue:1 Volume:1 Page:45-53
  • ISSN:2633-5409
  • Container-title:Materials Advances
  • language:en
  • Short-container-title:Mater. Adv.

Author:

Logan Julie V.1234ORCID,Frantz Elias B.5674,Casias Lilian K.89104,Short Michael P.1234ORCID,Morath Christian P.1112134,Webster Preston T.1112134

Affiliation:

1. Department of Nuclear Science and Engineering

2. Massachusetts Institute of Technology

3. Cambridge

4. USA

5. Department of Engineering Science & Mechanics

6. The Pennsylvania State University

7. State College

8. Quantum Phenomena Division

9. Sandia National Laboratories

10. Albuquerque

11. Space Vehicles Directorate

12. Air Force Research Laboratory

13. Kirtland Air Force Base

Abstract

High energy proton irradiation produces long-lived p-type doping in GaN and Ga2O3.

Funder

U.S. Department of Defense

Publisher

Royal Society of Chemistry (RSC)

Subject

Microbiology

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings;IEEE Transactions on Electron Devices;2023-09
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