Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency
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Affiliation:
1. Dept. of Energy (DOE), Washington DC (United States)
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Office of Scientific and Technical Information (OSTI)
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices;Micromachines;2023-10-31
2. Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends;Energies;2023-09-18
3. Paralleling of IGBT Power Semiconductor Devices and Reliability Issues;Electronics;2023-09-10
4. Phase-Shifted Full-Bridge Converter with an Improved Coupled Inductor Rectifier;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22
5. The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices;Journal of Materials Science and Chemical Engineering;2023
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