Paralleling of IGBT Power Semiconductor Devices and Reliability Issues

Abstract

Paralleling of power semiconductor devices is inevitable considering their widespread application and exploitation in the extended horizon of these applications. However, paralleling of power semiconductor devices is prone to severe unbalancing corresponding to the non-idealities of device parameters, which leads to non-identical dynamic and static characteristics of the power devices, as well as the operating conditions and aging. Therefore, the currents are generally non-uniform and cause the derating of the system. This paper discusses and analyzes issues associated with the paralleling of IGBT power devices, which can evoke serious reliability issues. Furthermore, the paper examines the techniques and methodologies that have been proposed to reduce the issue of current unbalancing of parallel-connected power devices.