Practical study on gate drive distribution network for multiple discrete IGBT device paralleling for a 90kW inverter
Author:
Affiliation:
1. Zhuzhou CRRC Times Electric Co.Ltd,Zhuzhou,China
2. Zhuzhou CRRC Times Electric UK Innovation Center (TEIC),Solihull,UK
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10567049/10567050/10567778.pdf?arnumber=10567778
Reference11 articles.
1. Experimental analysis of the current-carrying capacity of discrete IGBTs in TO-247-based packages;Sobe
2. Asynchronous Gate Signal Driving Method for Reducing Current Imbalance of Paralleled IGBT Modules Caused by Driving Circuit Parameter Difference
3. Evaluation of Frequency and Temperature Dependence of Power Losses Difference in Parallel IGBTs
4. Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs
5. Analysis of impedance and current distributions in parallel IGBT design
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